Excellent program/erase (P/E) of >10,000 cycles is manifested in our IrO x /GdO x /W cross-point memory device, as shown in Figure 9a. Every cycle was measured during the measurement. The program and erase voltages were +3.5 and -2.5 V, respectively, as shown schematically in the inset of Figure 9a. After 104 P/E cycles, the memory device maintain a resistance ratio of approximately 10 which is also acceptable for multilevel cell operation. Good data retention of >104 s is observed, as
shown in Figure 9b. Both HRS and LRS were read out at +0.2 V. A large resistance ratio of approximately 100 is maintained after 104 s. This cross-point memory device paves a way in future nanoscale high-density non-volatile memory. Figure 7 Self-compliance I – V switching characteristics and fitting. (a) Self-compliance Repeatable I-V hysteresis loop of our IrO x /GdO x /W TGF-beta inhibitor cross-point memory devices. A low operation voltage of ±3 V is applied to get repeatable resistive switching characteristics. (b) Fitted I-V curve in a log-log scale. Both LRS and HRS show trap-controlled space charge-limited current conduction mechanism. Figure 8 Statistical distribution
of resistances. Statistical distribution of IRS, HRS, and LRS of the IrO x /GdO x /W cross-point memory device. Figure 9 AC endurance and data retention characteristics. (a) Good AC endurance of more than 10,000 in every cycle of cross-point resistive switching memory device. Both resistances were read out at +0.2 V. (b) Good data retention characteristics of >104 s is obtained. Conclusions Enhanced resistive switching characteristics using the IrO x /GdO x /W cross-point PF-6463922 research buy memory structure have been obtained. The HRTEM image shows a polycrystalline structure of the GdO x films. The switching mechanism is based on the
formation and rupture of the conducting filament by oxygen ion migration, and the oxygen-rich GdO x layer formation at the IrO x /GdO x interface acts as a series resistance to control the current overshoot effect and improves Tacrolimus (FK506) the switching uniformity as compared to the via-hole devices. The cross-point memory device shows self-compliance bipolar resistive switching this website phenomena of consecutive 100 cycles with narrow distribution of LRS and HRS, excellent P/E cycles of >10,000, and good data retention of >104 s with resistance ratio >102 under low operation voltage of ±3 V. This memory device paves a way for future nanoscale high-density non-volatile memory applications. Authors’ information DJ is a Ph.D. student since September 2010, and AP has received his Ph.D. degree on July 2013 under the instruction of Professor SM. SM has been an Associate Professor in the Department of Electronic Engineering, Chang Gung University since August 2009. YYC is a Ph.D. student in the Department of Materials Science and Engineering, National Taiwan University, under the instruction of Professor JRY.