To obtain resistive switching characteristics, a positive formation process is used in this study. The same resistive switching mechanism also applies for the MOS structure; however, evolution of O2 gas was not observed because of the very low current (<20 μA) operation caused by its self-limitation. Overall, the migration of oxygen ions leads to the high current state as well as the resistive switching mechanism for both the MOS and MIM structures.

Figure 5 IrO x selleck chemicals llc /GeO x /W MIM structure, typical I – V characteristics, and migration of oxygen ions. (a) Schematic diagram of the IrO x /GeO x /W MIM structure. (b) Typical I-V characteristics of as-deposited and PMA devices. (c to f) The migration of oxygen ions during application of a formation voltage, as shown in (b). Figure 6 Plan-view TEM image of an

IrO x layer. With a typical thickness of approximately 3 nm on the SiO2/Si substrate. The IrO x metal is black and SiO2 is white. The IrO x metal layer this website contains pores that oxygen can readily migrate through. Typical I-V hysteresis characteristics for the as-deposited and PMA devices are presented in Figure 7. A low CC of 100 μA was observed. The SET/RESET voltages were +5.9/−3.4 V and +3.3/−1.4 V for the as-deposited and PMA devices, respectively. The RESET current of the PMA device is lower than the CC (approximately 22 μA) because there is no parasitic effect [44], which has also been observed in a MOS structure (Figure 4c). The PMA device exhibits lower operating Forskolin order current and SET/RESET voltages because PMA increases the number of oxygen vacancies. Furthermore, the resistance ratio (1,750 vs. 408) is

also increased after PMA, which may be related to the larger diameter of the filaments. After the formation and first RESET, the device could be consecutively switched between LRS and HRS by applying SET and RESET voltages, respectively, to the TE. Under SET voltage, the O2− ions migrate towards the TE and form an oxygen-rich GeO x layer (i.e., GeO2) at the GeO x /TE interface, as shown in Figure 8a. However, the evolution C1GALT1 of O2 gas is not observed under SET voltage because of the small amount of oxygen present. When the Ge-O bonds break, Ge-rich GeO x nanofilaments or Ge/GeO x NWs are formed in the GeO x bulk material, which will convert the device to the LRS. This suggests that the inside of the filament is Ge-rich and the outside of the filament is oxygen-rich, i.e., a core-shell structure. At RESET voltage, O2− ions will move from the oxygen-rich GeO x layer and oxidize the Ge nanofilament, as shown in Figure 8b. The Ge nanofilament is not fully oxidized, and part of the filament remains, which is confirmed by observed leakage current. The leakage currents at V read of +1 V are 7.5 × 10−10 and 5.1 × 10−8 A for a fresh device and that after first RESET, respectively.